Everspin MRAM是一種具有革命性的存儲器，其原理是利用電子自旋的磁性結構，來提供不會產生損耗的非揮發特性。Everspin MRAM可在集成了硅電路的磁性材料中存儲信息，以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發特性。Everspin是從飛思卡爾半導體公司分離出來的一家獨立公司。2006年，Everspin推出業界第一款商業化MRAM產品。今日，Everspin MRAM已廣泛用在數據存儲、工業自動化、游戲、能源管理、通訊、運輸、和航空電子領域。

FEATURES
· No write delays
· Unlimited write endurance
· Data retention greater than 20 years
· Automatic data protection on power loss
· Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40.
· 3.0 to 3.6 Volt power supply range
· Low-current sleep mode
· Industrial (-40 to 85°C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40 to 125°C) temperature range options.
· Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant packages.
· Direct replacement for serial EEPROM, Flash, and FeRAM
· MSL Level 3

DESCRIPTION
MR2xH40 is a family of 4,194,304-bit magnetoresistive random access memory (MRAM) devices organized as 524,288 words of 8 bits. They are the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. They have serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, with the MR2xH40 family both reads and writes can occur randomly in memory with no delay between writes.

The MR2xH40 family provides highly reliable data storage over a wide range of temperatures. The MR20H40 (50MHz) is offered with Industrial (-40° to +85 °C) range. The MR25H40 (40MHz) is offered with Industrial (-40° to +85 °C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options. Both are available in a 5 x 6mm, 8-pin DFN package. The pinout is compatible with serial SRAM, EEPROM, Flash, and FeRAM products.

      有限公司是英尚國際有限公司旗下大陸子公司，成立于2007年，是一家專業的靜態隨機記憶體產品及方案提供商，十年來專業致力代理分銷存儲器芯片IC, SRAM、MRAM、pSRAM、 FLASH芯片、SDRAM（DDR1/DDR2/DDR3）等,為客人提供性價比更高的產品及方案。原廠供貨，交期保障，價格優勢，專業服務。  
    產品簡介
    1. Low power SRAM (低功耗靜態隨機存儲器)1Mbit~8Mbit.
    2. SPI SRAM(串行靜態隨機存儲器)64Kbit~512Kbit.
    3. PSRAM[Pseudo SRAM,UtRAM] (虛擬靜態隨機存儲器)4Mbit~64Mbit.
    4. Cellular RAM(偽靜態隨機存儲器)4Mbit~64Mbit.
    5.NvSRAM,F-RAM,MRAM(非易失性存儲器)256Kbit~1Gbit
    6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit
    7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit